Process and Temperature Compensation for RF Low-Noise Amplifiers and Mixers
نویسندگان
چکیده
منابع مشابه
The Design of Narrowband Cmos Rf Low-noise Amplifiers
General conditions for minimizing the noise figure of any linear two-port are reviewed before considering the specific case of a MOSFET low-noise amplifier (LNA). It is shown that the minimum noise figure cannot be obtained over an arbitrarily large bandwidth with networks of low order. For narrowband operation, however, one may construct simple amplifiers whose noise figure and power gain are ...
متن کاملDesign of Sub-mW RF CMOS Low-Noise Amplifiers
The quest for low power, low cost, and highly integrated transceivers has gained substantial momentum due to the explosion of wireless applications such as personal area networks and wireless sensor networks. This dissertation presents a comprehensive study and a design methodology for power-efficient CMOS radio-frequency (RF) low-noise amplifiers (LNAs). To demonstrate the design methodology, ...
متن کاملRF Mixers
The two signals inserted into the two input ports are usually the Local Oscillator signal, and the incoming (for a receiver) or outgoing (for a transmitter) signal. To produce a new frequency (or new frequencies) requires a nonlinear device. In a mixing process if we want to produce an output frequency that is lower than the input signal frequency, then it is called down-conversion and if we wa...
متن کاملHigh-Frequency Noise in RF Active CMOS Mixers
A new analytical model for high-frequency noise in RF active CMOS mixers such as single-balanced and doublebalanced architectures is presented. The analysis includes the contribution of non-white gate-induced noise at the output as well as the spot noise figure (NF) of the RF CMOS mixer, while accounting for the non-zero correlation between the gateinduced noise and the channel thermal noise. T...
متن کاملCryogenic MMIC Low Noise Amplifiers for W - Band and Beyond
We discuss results of low noise amplifier Monolithic Millimeter-wave Integrated Circuits (MMICs), which were designed for specific frequencies in the range of 70-200 GHz. We report on room temperature and cryogenic noise performance for a variety of circuits. The designs utilize Northrop Grumman Corporation’s (NGC) 35 nm gate length InP HEMT technology. Some of the lowest reported noise figures...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Transactions on Circuits and Systems I: Regular Papers
سال: 2010
ISSN: 1549-8328,1558-0806
DOI: 10.1109/tcsi.2009.2031707